| PART |
Description |
Maker |
| MC68440 |
Dual-Channel Direct Memory Access Controller
|
Motorola, Inc
|
| K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IDT70824L IDT70824L20G IDT70824L20GB IDT70824L20PF |
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM)
|
IDT
Integrated Device Technology
|
| HB561008AR-20 HB561008A-20 HB561008B-12 HB561008B- |
x8 Fast Page Mode DRAM Module
262114-word x 8 bit dynamic random access memory module
26214-word x 8-bit dynamic random access memory module
262锛?14-word x 8-bit dynamic random access memory module
|
Hitachi,Ltd.
|
| MCM6249 MCM6249WJ2 MCM6249WJ3 MCM6249WJ35R2 MCM624 |
1M X 4 bit static random access memory
1M x4 Bit Static Random Access Memory
CRYSTALS 30/50 0 70 20PF 20.000MHZ ATCUT FUND HC-49/UP
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| SI3016 |
3.3 V ENHANCED GLOBAL DIRECT ACCESS ARRANGEMENT
|
List of Unclassifed Manufacturers
|
| SI3012 SI3021 SI3015-KS SI3044 SI3046 SI3048 SI302 |
3.3 V FCC/JATE DIRECT ACCESS ARRANGEMENT
|
ETC
N.A.
|
| SI3068 SI3068-B-FS |
FCC EMBEDDED DIRECT ACCESS ARRANGEMENT
|
Silicon Laboratories Inc.
|
| TMM2063AP-10 TMM2063AP-12 TMM2063AP-70 |
70ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory
120ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory
100ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory
65536 BITS HIGH SPEED AND LOW POWER STATIC RAMDOM ACCESS MEMORY
|
Toshiba Semiconductor
|
| SWG8 |
THREE PHASE CONTROLLE
|
celduc-relais
|
| HM514400B HM514400BL HM514400C HM514400CL HM514400 |
1,048,576-word x 4-bit dynamic random access memory, 80ns
1,048,576-word x 4-bit dynamic random access memory, 60ns
1/048/576-word X 4-bit Dynamic Random Access Memory
1,048,576-word x 4-bit dynamic random access memory, 70ns
|
Hitachi Semiconductor
|
